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ISSN: 1554-3641 (Online)
Research Article Open Access

Localization of Implanted Impurities in Silicon

M. Jadan1 and Jihad S.M. Addasi1
  • 1 Department of Basic Sciences, Tafila Applied University College Al-Balqa Applied University, P.O. Box 40, AL-Eys-66141, Tafila, Jordan

Abstract

Localization of implanted boron impurities at the nodes and interstitial of silicon depending on the implantation current density has been studied by the X-ray diffraction and astrophysical methods. A shares of the impurity at the lattice sites increases with growing current density due to the instantaneous vacancy concentration and suppression of the impurity displacement from the sites by silicon interstitial.

American Journal of Applied Sciences
Volume 2 No. 4, 2005, 857-859

DOI: https://doi.org/10.3844/ajassp.2005.857.859

Submitted On: 5 January 2005 Published On: 30 April 2005

How to Cite: Jadan, M. & Addasi, J. S. (2005). Localization of Implanted Impurities in Silicon. American Journal of Applied Sciences, 2(4), 857-859. https://doi.org/10.3844/ajassp.2005.857.859

Open AccessCopyright: © 2005 M. Jadan and Jihad S.M. Addasi. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

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Keywords

  • Localization
  • silicon
  • impurities