Low-doping Effects of Nanostructure ZnO: Sn tin films annealed at different temperature in Nitrogen ambient to be applied as an Anti-reflecting coating (ARC)

Abstract

Problem statement: The focus of this research is to discover the significant influences of substituting low concentration Sn at Zn-site as an Anti-Reflecting Coating (ARC) for Zn_1-xSn_xO compound. The effects of tin dopants on the structural and morphology properties of ZnO thin films prepared using the sol-gel method were investigated. Approach: The effects of annealing temperature on the deposited films were also investigated at three different temperatures of 400, 500 and 600°C. The composition of the Zn_1-xSn_xO sample are x = 0.00, 0.05, 0.10 and 0.15. As a starting material, zinc acetate dehydrate was used; 2-methoxyethanol and mono ethanolamine were used as solvent and stabilizer, respectively. The dopant source was tin chloride. Results: Microstructural and surface morphology of samples were characterized by using Scanning Electron Microscopy (SEM). The crystallinity and defects are studied using X-Ray Diffraction (XRD). Molecular bonding is carried out using Raman spectroscopy and optical study of band gap is investigated using UV-VIS measurement. Conclusion: The value of band gap obtained increased slightly as the concentration of Sn increased. The increment of the band gap is acceptable as a requirement for good anti-reflecting coating element. Therefore these films can be applied on silicon solar cell.